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| 2SK1859 Silicon N Channel MOS FET Application TO-3PFM High speed power switching Features * * * * * Low on-resistance High speed switching Low Drive Current No secondary breakdown Suitable for Switching regulator 2 1 1 23 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 900 30 6 15 6 60 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK1859 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 900 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 720 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 3 A VGS = 10 V * ID = 3 A VDS = 20 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 3 A VGS = 10 V RL = 10 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 30 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 2.0 10 250 4.0 3.0 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2.3 3.7 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK1341 -- -- -- -- -- -- -- -- 980 400 195 20 80 125 100 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 6 A, VGS = 0 IF = 6 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 1000 -- ns -------------------------------------------------------------------------------------- 2SK1859 Power vs. Temperature Derating 90 Channel Dissipation Pch (W) 50 30 Drain Current I D (A) 10 3 1 0.3 0.1 0.05 0 50 100 150 1 Maximum Safe Operation Area 60 30 PW 1 n ) m = tio a is (on s ra re S 10 D ea D C m Op his y R O s pe tb (1 in ed ra Sh it tio ot n lim ) (T c = 25 C ) 10 s 0 10 s Ta = 25C 3 10 30 100 300 1000 Case Temperature Tc (C) Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 ch - c(t) = s(t). ch - c ch - c = 2.08C/W, Tc = 25C PDM 0.03 0.01 10 1S ho lse t Pu PW T PW D = ---- T 1 10 100 1m 10 m 100 m Pulse Width PW (S) |
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